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SJD00074BED - Silicon PNP epitaxial planar type

Features

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  • Low collector-emitter saturation voltage VCE(sat).
  • Large collector current IC.
  • Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Jun.

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Datasheet Details

Part number SJD00074BED
Manufacturer Panasonic Semiconductor
File Size 79.32 KB
Description Silicon PNP epitaxial planar type
Datasheet download datasheet SJD00074BED Datasheet
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    Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification 7.5±0.2 3.8±0.2 Unit: mm 4.5±0.2 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −50 −5 −2 −3 1.5 150 −55 to +150 Unit V V V A A W °C °C 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.
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