UN0231C - RF Power Amplifier

Datasheet Summary

Features

High efficiency with super miniature, 0.08 cc package(7.5 × 7.5 × 1.7 mm) φ 0.8 12 11 10 1 2 3 6 7.3 7.5±0.15 5 4 4.0 s Absolute Maximum Ratings Ta=25°C Parameter Power supply voltage 1.
1 Power supply voltage 2.
1 Circuit current 1 Circuit current 2 Gate voltage Max input power Allowable power dissipation Case temperature.
2 Storage temperature Symbol VDD1 VDD2 IDD1 IDD2 VGG PIN PD Tcase Tstg Ratings 6 6 200 800.
4 10 2.
30 to +110.
30 to +12.

Panasonic Semiconductor

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Datasheet Details

Part number	UN0231C
Manufacturer	Panasonic Semiconductor
File Size	23.47 KB
Description	RF Power Amplifier
Datasheet	UN0231C Datasheet
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GaAs PA Module UN0231C RF Power Amplifier Module Unit : mm For the preamplifier of the transmitting section in a cellular phone s Features • High efficiency with super miniature, 0.08 cc package(7.5 × 7.5 × 1.7 mm) φ 0.8 12 11 10 1 2 3 6 7.3 7.5±0.15 5 4 4.0 s Absolute Maximum Ratings Ta=25°C Parameter Power supply voltage 1 *1 Power supply voltage 2 *1 Circuit current 1 Circuit current 2 Gate voltage Max input power Allowable power dissipation Case temperature *2 Storage temperature Symbol VDD1 VDD2 IDD1 IDD2 VGG PIN PD Tcase Tstg Ratings 6 6 200 800 −4 10 2 −30 to +110 −30 to +120 Unit V V mA mA V dBm W °C °C 1 : PIN 2 : VDD1 3 : VDD2 4 : POUT 4-0.7 7 8 (0.9) 2-1.2 4.0 7.5±0.15 9 1.5±0.2 0.59 Tolerance dimension without indication : ±0.

Published: Apr 17, 2005 |