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UN111L - Silicon PNP epitaxial planer transistor

Datasheet Summary

Description

12 3 10 30 100 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB 6 IO VIN f=1MHz IE=0 Ta=2

Features

  • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 1.0 2.4±0.2 2.0±0.2 0.45±0.05 2 1 2.5 1.0±0.1 R 0. 7 0.85 0.55±0.1 s Resistance by Part Number q q q q q q q q q q q q q q q UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1110 UN111D UN111E UN111F UN111H UN111L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22.

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Datasheet Details

Part number UN111L
Manufacturer Panasonic Semiconductor
File Size 181.53 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet UN111L Datasheet
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Full PDF Text Transcription

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Transistors with built-in Resistor UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor For digital circuits 6.9±0.1 1.5 2.5±0.1 1.0 Unit: mm s q q 0.4 1.5 R0.9 R0.9 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 1.0 2.4±0.2 2.0±0.2 0.45±0.05 2 1 2.5 1.0±0.1 R 0. 7 0.85 0.55±0.1 s Resistance by Part Number q q q q q q q q q q q q q q q UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1110 UN111D UN111E UN111F UN111H UN111L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.
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