UN1223
UN1223 is Silicon NPN epitaxial planer transistor manufactured by Panasonic.
Features q q
0.85 s Resistance by Part Number q q q q
0.55±0.1
UN1221 UN1222 UN1223 UN1224
(R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ
(R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ (Ta=25˚C)
Ratings 50 50 500 600 150
- 55 to +150 Unit V V m A m W ˚C ˚C
2.5 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
1:Base 2:Collector 3:Emitter M Type Mold Package
Internal Connection
R1
R2
E s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current UN1221 UN1222 UN1223/1224
(Ta=25˚C)
Symbol ICBO ICEO IEBO VCBO VCEO h FE VCE(sat) VOH VOL f T R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2m A, IB = 0 VCE = 10V, IC = 100m A IC = 100m A, IB = 5m A VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω VCB = 10V, IE =
- 50m A, f = 200MHz (- 30%) 200 2.2 4.7 10 R1/R2 0.8 1.0 0.22 1.2 (+30%) kΩ 4.9 0.2 50 50 40 50 60 0.25 V V V MHz min typ max 1 1 5 2 1 V V m A Unit µA µA
Collector to base voltage Collector to emitter voltage Forward current transfer ratio UN1221 UN1222 UN1223/1224
Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance UN1221/1224 UN1222 UN1223
Resistance ratio UN1224
4.1±0.2
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.0±0.1
R 0. 7
4.5±0.1
Transistors with built-in Resistor mon characteristics chart PT
- Ta
UN1221/1222/1223/1224
Total power dissipation PT (m W)
700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN1221 IC
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