Datasheet4U Logo Datasheet4U.com

UN1231 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

  • 3.5±0.1 1.0 V Forward current transfer ratio Collector to emitter saturation voltage Input resistance Resistance ratio 1 Transistors with built-in Resistor PT.
  • Ta 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. UN1231/1231A IC.
  • VCE VCE(sat).
  • IC 100 1.2 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 1.0 IB=1.2mA 1.0mA 0.8 0.8mA 0.6mA 0.6 0.4mA 0.4 0.2mA 0.2 IC/I.

📥 Download Datasheet

Datasheet preview – UN1231

Datasheet Details

Part number UN1231
Manufacturer Panasonic Semiconductor
File Size 31.66 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet UN1231 Datasheet
Additional preview pages of the UN1231 datasheet.

📁 Similar Datasheet

  • UN102M - UN102M / UN102MS (Vishay)
  • UN102M - Disc Ceramic Capacitors (MALLORY)
  • UN103M - Disc Ceramic Capacitors (MALLORY)
  • UN103MS - Disc Ceramic Capacitors (MALLORY)
  • UN1066 - HIGH SPEED SWITCHING TRANSISTOR (UTC)
  • UN1518 - POWER (SWITCHING) TRANSISTOR (UTC)
  • UN152M - Disc Ceramic Capacitors (MALLORY)
  • UN1596 - NPN SILICON TRANSISTOR (Unisonic Technologies)
Other Datasheets by Panasonic Semiconductor
  • UN1231A - Silicon NPN epitaxial planer transistor
  • UN1210 - Silicon NPN epitaxial planer transistor
  • UN1211 - Silicon NPN epitaxial planer transistor
  • UN1212 - Silicon NPN epitaxial planer transistor
  • UN1213 - Silicon NPN epitaxial planer transistor
  • UN1214 - Silicon NPN epitaxial planer transistor
  • UN1215 - Silicon NPN epitaxial planer transistor
  • UN1216 - Silicon NPN epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text
Transistors with built-in Resistor UN1231/1231A Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 2.5±0.1 1.0 For amplification of the low frequency 0.4 1.5 1.5 R0.9 R0.9 1.0±0.1 q 0.85 0.55±0.1 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage UN1231 UN1231A Symbol VCBO VCEO IC ICP PT* Tj Tstg (Ta=25˚C) Ratings 20 60 20 50 0.7 1.5 1.0 150 –55 to +150 Unit 3 2 1 2.5 2.5 V UN1231 Collector to emitter voltage UN1231A Collector current Peak collector current Total power dissipation Junction temperature Storage temperature 1:Base 2:Collector 3:Emitter M Type Mold Package V A A W ˚C ˚C R1(1kΩ) Internal Connection 1.25±0.05 C B R2 (47kΩ) * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.
Published: |