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UN211T - Silicon PNP epitaxial planer transistor

Datasheet Summary

Description

2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Characteristics charts of UN2115 IC VCE 160 100 VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400

Features

  • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 0.95 2.9.
  • 0.05 1 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.1 2 q q q q q q q q q q q q q q q q q q q q UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 UN2119 UN2110 UN211D UN211E UN211F UN211H UN211L UN211M UN211N UN211T UN211V UN211Z Marking Symbol (R1) 6A 10kΩ 6B 2.

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Datasheet Details

Part number UN211T
Manufacturer Panasonic Semiconductor
File Size 235.97 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet UN211T Datasheet
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Full PDF Text Transcription

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Transistors with built-in Resistor UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor For digital circuits 0.65±0.15 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 1.5 –0.05 +0.25 s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.
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