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UN2122 - Silicon PNP epitaxial planer transistor

Datasheet Summary

Description

emitter saturation voltage VCE(sat) (V) Ta=25˚C 200 Forward current transfer ratio hFE 30 10 3 1 0.3 0.1 0.03 0.01 1 Ta=75˚C 25˚C 25˚C 200 Collector current IC (mA) IB= 1.2mA 16

Features

  • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.8.
  • 0.3 0.65±0.15 +0.2 Unit: mm 0.65±0.15 1.5.
  • 0.05 +0.25 0.95 2.9.
  • 0.05 1 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.1 2 s Resistance by Part Number 1.1.
  • 0.1 +0.2 q q q q q q UN2121 UN2122 UN2123 UN2124 UN212X UN212Y Marking Symbol (R1) 7A 2.

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Datasheet Details

Part number UN2122
Manufacturer Panasonic Semiconductor
File Size 84.91 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet UN2122 Datasheet
Additional preview pages of the UN2122 datasheet.

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Other Datasheets by Panasonic Semiconductor
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Full PDF Text Transcription

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Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y Silicon PNP epitaxial planer transistor For digital circuits s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.8 –0.3 0.65±0.15 +0.2 Unit: mm 0.65±0.15 1.5 –0.05 +0.25 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.1 2 s Resistance by Part Number 1.1 –0.1 +0.2 q q q q q q UN2121 UN2122 UN2123 UN2124 UN212X UN212Y Marking Symbol (R1) 7A 2.2kΩ 7B 4.7kΩ 7C 10kΩ 7D 2.2kΩ 7I 0.27kΩ 7Y 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0.
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