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UN2222 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

  • 2 s Resistance by Part Number q q q 0.1 to 0.3 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 500 200 150.
  • 55 to +150 Unit V V mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector 0.8 q UN2221 UN2222 UN2223 UN2224 Marking Symbol 9A 9B 9C 9D (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 1.1.

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Datasheet Details

Part number UN2222
Manufacturer Panasonic Semiconductor
File Size 63.57 KB
Description Silicon NPN epitaxial planer transistor
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Transistors with built-in Resistor UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor For digital circuits 0.65±0.15 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 1.5 –0.05 +0.25 0.95 2.9 –0.05 1 q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.1 s Features 2 s Resistance by Part Number q q q 0.1 to 0.3 0.4±0.
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