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UN411E - Silicon PNP epitaxial planer transistor

Datasheet Summary

Description

r> 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB 6 IO VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO= 5V Ta=25˚C 100 30

Features

  • q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 1 2 3 q q q q q q q q q q q q q q q UN4111 UN4112 UN4113 UN4114 UN4115 UN4116 UN4117 UN4118 UN4119 UN4110 UN411D UN411E UN411F UN411H UN411L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ.
  • 5.1kΩ 10kΩ.
  • 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 1.27.

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Datasheet Details

Part number UN411E
Manufacturer Panasonic Semiconductor
File Size 180.78 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet UN411E Datasheet
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Full PDF Text Transcription

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Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor For digital circuits 4.0±0.2 3.0±0.2 Unit: mm s Features q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 1 2 3 q q q q q q q q q q q q q q q UN4111 UN4112 UN4113 UN4114 UN4115 UN4116 UN4117 UN4118 UN4119 UN4110 UN411D UN411E UN411F UN411H UN411L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package Internal Connection R1 2.0±0.
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