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UN4121 - Silicon PNP epitaxial planer transistor

Datasheet Summary

Description

1 0.3 0.1 0.03 0.01 1 Ta=75˚C 25˚C 25˚C 200 Collector current IC (mA) IB= 1.2mA 160 1.0mA 0.8mA 0.6mA 80 0.4mA 40 0.2mA 0 0 2 4

Features

  • 4.0±0.2 Unit: mm C B R2 E 1 Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y s Electrical Characteristics Parameter Collector cutoff current UN412X Collector cutoff current UN412X Emitter cutoff current UN4121 UN4122/412X/412Y UN4123/4124 (Ta=25˚C) Symbol ICBO ICBO ICEO ICEO IEBO VCBO VCEO Conditions VCB =.
  • 50V, IE = 0 VCB =.
  • 50V, IE = 0 VCE =.
  • 50V, IB = 0 VCE =.
  • 50V, IB = 0 VEB =.
  • 6V, IC = 0 IC =.
  • 10µA, IE = 0 IC =.

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Datasheet Details

Part number UN4121
Manufacturer Panasonic Semiconductor
File Size 84.27 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet UN4121 Datasheet
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Full PDF Text Transcription

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Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits q q s Resistance by Part Number q q q q q q UN4121 UN4122 UN4123 UN4124 UN412X UN412Y (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5.0kΩ 4.6kΩ 0.7±0.1 1 2 3 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –500 300 150 –55 to +150 Unit V V mA mW ˚C ˚C R1 Internal Connection 2.0±0.2 marking +0.2 0.45–0.1 15.6±0.
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