UN4222 - Silicon NPN epitaxial planer transistor

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C B R2 E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current UN4221 UN4222 UN4223/4224 (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω 2.2 (.
30%) 4.7 10 R1/R2 0.8 0.17 1.0 0.22 1.2 0.27 (+30%) kΩ 4.9 0.2 50 50 40 50 60 0.25 V V V.

Panasonic Semiconductor

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Datasheet Details

Part number	UN4222
Manufacturer	Panasonic Semiconductor
File Size	62.29 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	UN4222 Datasheet
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Transistors with built-in Resistor UN4221/4222/4223/4224 Silicon NPN epitaxial planer transistor For digital circuits 4.0±0.2 3.0±0.2 Unit: mm q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. marking +0.2 0.45–0.1 0.7±0.1 q q q q UN4221 UN4222 UN4223 UN4224 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ (Ta=25˚C) Ratings 50 50 500 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 2 3 1.27 1.27 2.54±0.

Published: Apr 17, 2005 |