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UN511L - Silicon PNP epitaxial planer transistor

Datasheet Summary

Description

115/5116/5117/5118/5119/5110/ Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Characteristics charts of UN5115 IC VCE 160 100 VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE

Features

  • 0.65 0.425 0.425 1 2.0±0.2 1.3±0.1 0.65 q 3 2 0.9±0.1 0 to 0.1 q q q q q q q q q q q q q q q q q q q q UN5111 UN5112 UN5113 UN5114 UN5115 UN5116 UN5117 UN5118 UN5119 UN5110 UN511D UN511E UN511F UN511H UN511L UN511M UN511N UN511T UN511V UN511Z Marking Symbol 6A 6B 6C 6D 6E 6F 6H 6I 6K 6L 6M 6N 6O 6P 6Q EI EW EY FC FE (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51Ω 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ 2.2kΩ 4.7kΩ 22kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ.

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Datasheet Details

Part number UN511L
Manufacturer Panasonic Semiconductor
File Size 235.37 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet UN511L Datasheet
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Transistors with built-in Resistor UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z Silicon PNP epitaxial planer transistor For digital circuits 2.1±0.1 Unit: mm 1.25±0.1 s Features 0.65 0.425 0.425 1 2.0±0.2 1.3±0.1 0.65 q 3 2 0.9±0.1 0 to 0.1 q q q q q q q q q q q q q q q q q q q q UN5111 UN5112 UN5113 UN5114 UN5115 UN5116 UN5117 UN5118 UN5119 UN5110 UN511D UN511E UN511F UN511H UN511L UN511M UN511N UN511T UN511V UN511Z Marking Symbol 6A 6B 6C 6D 6E 6F 6H 6I 6K 6L 6M 6N 6O 6P 6Q EI EW EY FC FE (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51Ω 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ 2.2kΩ 4.7kΩ 22kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 0.7±0.1 0.2±0.
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