UN7231 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

1 Transistors with built-in Resistor PT.
Ta 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 0 0 2 4 6 8 10 12 1.2 UN7231 IC.
VCE 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Total power dissipation PT (W) Collector current IC (A) Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. IC/IB=100 1.0 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C.
25˚C IB=1.2mA 1.0mA 0.8 0.8mA 0.6mA 0.

Panasonic Semiconductor

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Part number	UN7231
Manufacturer	Panasonic Semiconductor
File Size	30.80 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	UN7231 Datasheet
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Transistors with built-in Resistor UN7231 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. q q High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC ICP PT* Tj Tstg (Ta=25˚C) marking Ratings 20 20 0.7 1.5 1.

Published: Apr 17, 2005 |