UN8231 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

0.5 4.5±0.1 V Forward current transfer ratio Collector to emitter saturation voltage Input resistance Resistance ratio Transition frequency 1 Transistors with built-in Resistor PT.
Ta 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 0 0 2 4 6 8 10 12 1.2 UN8231/UN8231A IC.
VCE 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=100 Total power dissipation PT (W) Collector current IC (A) Copper foil area of 1cm2 or more and thi.

Panasonic Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	UN8231
Manufacturer	Panasonic Semiconductor
File Size	32.16 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	UN8231 Datasheet
Additional preview pages of the UN8231 datasheet.

📁 Similar Datasheet

UN8HX - Single 4.2V 500mA small size Lithium charge management IC (ETC)

Other Datasheets by Panasonic Semiconductor

UN8231A - Silicon NPN epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text

Transistors with built-in Resistor UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 0.15 For switching 6.9±0.1 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.65 max. q 0.45–0.05 +0.1 Parameter Collector to base voltage UN8231 UN8231A Symbol VCBO VCEO ICP IC PT* Tj Tstg Ratings 20 60 20 50 1.5 0.7 1 150 –55 to +150 Unit V UN8231 Collector to emitter voltage UN8231A Peak collector current Collector current Total power dissipation Junction temperature Storage temperature 1 : Emitter 2 : Collector 3 : Base MT-2 Type Package V A A W ˚C ˚C R1(1kΩ) Internal Connection 2.5±0.1 s Absolute Maximum Ratings 1 2 3 (Ta=25˚C) 0.45–0.05 +0.1 2.5±0.5 2.5±0.5 C B R2 (47kΩ) * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.

Published: Apr 17, 2005 |