UNR111x - Silicon PNP epitaxial planer transistor

Panasonic

General Description

°C 0.9 mA 0.8 mA

Key Features

meter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR1111 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC =.
10 µA, IE = 0 IC =.
2 mA, IB = 0 VCB =.
50 V, IE = 0 VCE =.
50 V, IB = 0 VEB =.
6 V, IC = 0 Min.
50.
50.
0.1.
0.5.
0.5.
0.2.
0.1.
0.01.
1.0.

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UNR111x silicon pnp epitaxial planer transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	UNR111x
Manufacturer	Panasonic
File Size	387.31 KB
Description	Silicon PNP epitaxial planer transistor
Datasheet	UNR111x Datasheet

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Full PDF Text Transcription (Reference)

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Transistors with built-in Resistor UNR111x Series (UN111x Series) Silicon PNP epitaxial planar transistor Unit: mm For digital circuits (0.4) 6.9±0.1 (1.5) (1.5) 3.5±0.1 2.5±0.1 (1.0) (1.0) 2.0±0.2 2.4±0.2 1.0±0.1 • • • • • • • • • • • • • • • UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F UNR111H UNR111L (UN1110) (UN1111) (UN1112) (UN1113) (UN1114) (UN1115) (UN1116) (UN1117) (UN1118) (UN1119) (UN111D) (UN111E) (UN111F) (UN111H) (UN111L) (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 2.2 kΩ 4.7 kΩ (R2)  10 kΩ 22 kΩ 47 kΩ 47 kΩ    5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 3 (2.5) 2 (2.5) 1 1.25±0.05 ■ Resistance by Part Number (0.85) 0.55±0.1 0.45±0.