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UNR31A1 - PNP Transistor

Datasheet Summary

Features

  • s.
  • Suitable for high-density mounting and downsizing of the equipment.
  • Contribute to low power consumption 0.33+0.05.
  • 0.02 3 0.10+0.05.
  • 0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating.
  • 50.
  • 50.
  • 80 100.

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Datasheet Details

Part number UNR31A1
Manufacturer Panasonic Semiconductor
File Size 99.05 KB
Description PNP Transistor
Datasheet download datasheet UNR31A1 Datasheet
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www.DataSheet4U.net Transistors with built-in Resistor UNR31A1 Silicon PNP epitaxial planar transistor Unit: mm For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −80 100 125 −55 to +125 Unit V V mA mW °C °C 5° 0.15 min. 0.23+0.05 –0.02 1 2 0 to 0.01 0.52±0.
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