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UNR521W - Silicon NPN Transistor

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Features

  • s.
  • Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
  • SMini type package allowing easy automatic insertion through tape packing.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation Junction temperature Storage temperature PT 150 mW Tj 150 °C Tstg.

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Datasheet Details

Part number UNR521W
Manufacturer Panasonic Semiconductor
File Size 258.56 KB
Description Silicon NPN Transistor
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www.DataSheet4U.com Transistors with built-in Resistor UNR521W Silicon NPN epitaxial planar type For digital circuits  Features  Costs can be reduced through downsizing of the equipment and reduction of the number of parts  SMini type package allowing easy automatic insertion through tape packing  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation Junction temperature Storage temperature PT 150 mW Tj 150 °C Tstg –55 to +150 °C 0.3+–00..01 3 (0.425) Unit: mm 0.15+–00..0150 1.25±0.10 2.1±0.1 5° 0.2±0.1 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° 0 to 0.1 0.9±0.1 0.9–+00..
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