Datasheet4U Logo Datasheet4U.com

XN01215 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

  • 1 DataSheet 4 U . com www. DataSheet4U. com Composite Transistors PT.
  • Ta 500 XN1215 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE 160 100 VCE(sat).
  • IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE.
  • IC 400 VCE=10V 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C 350 300 250 200 25˚C 150 100 50 0.
  • 25˚C Ta=7.

📥 Download Datasheet

Datasheet preview – XN01215

Datasheet Details

Part number XN01215
Manufacturer Panasonic Semiconductor
File Size 161.88 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN01215 Datasheet
Additional preview pages of the XN01215 datasheet.

📁 Similar Datasheet

  • XN0NE92 - Silicon P-channel MOSFET (Panasonic)
Other Datasheets by Panasonic Semiconductor
  • XN01210 - Silicon NPN Transistor
  • XN01211 - Silicon NPN epitaxial planer transistor
  • XN01212 - Silicon NPN Transistor
  • XN0121E - Silicon NPN Transistor
  • XN01110 - Silicon PNP epitaxial planer transistor
  • XN01112 - Silicon PNP Transistor
  • XN01114 - Silicon PNP epitaxial planer transistor
  • XN01119 - Silicon PNP epitaxial planer transistor

Full PDF Text Transcription

▶ Click to expand full text
www.DataSheet4U.com Composite Transistors XN1215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1215 × 2 elements 0.
Published: |