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XN04382 Datasheet Silicon NPN(pnp) Epitaxial Planer Transistor

Manufacturer: Panasonic

Overview: posite Transistors XN04382 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 –50 –50 –500 300 150 –55 to +150 Unit V V mA V V mA mW ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: HL Internal Connection 6 5 4 Tr1 1 2 3 ˚C Tr2 0 to 0.05 UN1213+UN1121 0.1 to 0.3 0.8 0.16–0.06 +0.2 +0.1 1.45±0.

Key Features

  • +0.1 +0.1 1 Composite Transistors XN04382 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE =.
  • 2mA, f = 200MHz Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 3.5V, RL = 1kΩ.
  • 30% 0.8 47 1.0 150 4.9 0.2 +30% 1.2 MHz 80 0.25 V V V kΩ min 50 50 0.1 0.5 0.1 typ max Unit V V µA µA mA s Electrical Characte.

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