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XN05531 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

  • 1 Composite Transistors PT.
  • Ta 240 80 Ta=25˚C XN05531 IC.
  • VCE 60 25˚C 50 VCE=4V IC.
  • VBE Total power dissipation PT (mW) 200 Collector current IC (mA) 60 160 Collector current IC (mA) Ta=75˚C 40.
  • 25˚C IB=500µA 40 400µA 300µA 200µA 20 100µA 120 30 80 20 40 10 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat).
  • IC 1.

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Datasheet Details

Part number XN05531
Manufacturer Panasonic Semiconductor
File Size 107.67 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN05531 Datasheet
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www.DataSheet4U.com Composite Transistors XN05531 (XN5531) Silicon NPN epitaxial planer transistor For high frequency oscillation and mixing 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 6 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 G 3 2 1 (0.65) 0.30+0.10 –0.05 0.50+0.10 –0.05 I Basic Part Number of Element G 10° 1.1+0.2 –0.1 1.1+0.3 –0.
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