Overview: Composite Transistors XN05553 (XN5553)
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 6
1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm
0.16+0.10 –0.06 G G Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 3 2 1
(0.65) 0.30+0.10 –0.05 0.50+0.10 –0.05 I Basic Part Number of Element
G 10°
1.1+0.2 –0.1 1.1+0.3 –0.1 2SD1149 × 2 elements I Absolute Maximum Ratings
Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current
www.DataSheet4U.com (Ta=25˚C)
Ratings 100 100 15 20 50 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) Collector to emitter voltage 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini6-G1 Package Marking Symbol: 4U Internal Connection
6 5 4 Tr1 1 2 3 Peak collector current Total power dissipation Overall Junction temperature Storage temperature Tr2 I Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transition frequency (Ta=25˚C)
Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) NV fT Conditions IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 60V, IE = 0 VCE = 60V, IB = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100KΩ, Function = FLAT VCB = 10V, IE = –2mA, f = 200MHz 400 0.05 80 150 min 100 100 15 0.1 1.0 2000 0.2 V mV MHz typ max Unit V V V µA µA Note) The Part number in the Parenthesis shows conventional part number. 0 to 0.1 0.4±0.
