XN05553 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

5° 1 Composite Transistors PT.
Ta 500 80 Ta=25˚C XN05553 IC.
VCE 60 VCE=10V 50 25˚C IC.
VBE Total power dissipation PT (mW) Collector current IC (mA) 60 300 IB=100µA 80µA 60µA 50µA 40µA 30µA 20µA Collector current IC (mA) 400 40 Ta=75˚C.
25˚C 40 30 200 20 20 10µA 100 10 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat.

Panasonic Semiconductor

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Datasheet Details

Part number	XN05553
Manufacturer	Panasonic Semiconductor
File Size	112.60 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN05553 Datasheet
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Composite Transistors XN05553 (XN5553) Silicon NPN epitaxial planer transistor For amplification of the low frequency 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 6 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 G G Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 3 2 1 (0.65) 0.30+0.10 –0.05 0.50+0.10 –0.05 I Basic Part Number of Element G 10° 1.1+0.2 –0.1 1.1+0.3 –0.1 2SD1149 × 2 elements I Absolute Maximum Ratings Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current www.DataSheet4U.

Published: Jul 8, 2007 |