Overview: www.DataSheet4U.com Composite Transistors XN06534 (XN6534)
Silicon NPN epitaxial planar type
For high-frequency amplification
4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 Unit: mm
0.16+0.10 –0.06 1.50+0.25 –0.05 0.30+0.10 –0.05 0.50+0.10 –0.05 ■ Basic Part Number
• 2SC2404 × 2 10˚ 1.1+0.2 –0.1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 3 2 1 ■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 3 15 200 150 −55 to +150 Unit V V V mA mW °C °C
1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74 0 to 0.1 Marking Symbol: 7F Internal Connection
4 5 6 1.1+0.3 –0.1 4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package Tr2 3 2 Tr1 1 ■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio hFE ratio * Transition frequency Reverse transfer capacitance (Common emitter) Power gain Noise figure Symbol VCBO VEBO VBE hFE hFE(Small
/Large) Conditions IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 6 V, IE = −1 mA VCB = 6 V, IE = −1 mA VCB = 6 V, IE = −1 mA VCB = 6 V, IE = −1 mA, f = 200 MHz VCB = 6 V, IE = −1 mA, f = 10.7 MHz VCB = 6 V, IE = −1 mA, f = 100 MHz VCB = 6 V, IE = −1 mA, f = 100 MHz Min 30 3 Typ Max Unit V V 720 40 0.50 450 0.99 650 0.8 24 3.3 1.0 260 mV MHz pF dB dB fT Cre GP NF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004 SJJ00109BED 0.4±0.
