Datasheet4U Logo Datasheet4U.com

XN09D57 - Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD)

Datasheet Summary

Features

  • s.
  • Two elements incorporated into one package (Tr + SBD).
  • Reduction of the mounting area and assembly cost by one half.
  • Low collector-emitter saturation voltage VCE(sat) 0.50+0.10.
  • 0.05 0.30+0.10.
  • 0.05 6 5 4 Unit: mm 0.16+0.10.
  • 0.06 1.50+0.25.
  • 0.05 2.8+0.2.
  • 0.3 1 2 3.
  • Basic Part Number.
  • XN9D57 + MA3XD11 (0.95) (0.95) 1.9±0.1 2.90+0.20.
  • 0.05 Display at No.1 lead 10° 1.1+0.2.
  • 0.1 Tr Collecto.

📥 Download Datasheet

Datasheet preview – XN09D57

Datasheet Details

Part number XN09D57
Manufacturer Panasonic Semiconductor
File Size 101.26 KB
Description Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD)
Datasheet download datasheet XN09D57 Datasheet
Additional preview pages of the XN09D57 datasheet.

📁 Similar Datasheet

  • XN0NE92 - Silicon P-channel MOSFET (Panasonic)
Other Datasheets by Panasonic Semiconductor
  • XN09D58 - Silicon PNP epitaxial planar type
  • XN09D61 - Silicon PNP epitaxial planar type
  • XN01110 - Silicon PNP epitaxial planer transistor
  • XN01112 - Silicon PNP Transistor
  • XN01114 - Silicon PNP epitaxial planer transistor
  • XN01119 - Silicon PNP epitaxial planer transistor
  • XN01210 - Silicon NPN Transistor
  • XN01211 - Silicon NPN epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text
Composite Transistors XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) For DC-DC converter ■ Features • Two elements incorporated into one package (Tr + SBD) • Reduction of the mounting area and assembly cost by one half • Low collector-emitter saturation voltage VCE(sat) 0.50+0.10 –0.05 0.30+0.10 –0.05 6 5 4 Unit: mm 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 1 2 3 ■ Basic Part Number • XN9D57 + MA3XD11 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Display at No.1 lead 10° 1.1+0.2 –0.1 Tr Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current VCBO VCEO VEBO IC ICP VR VRRM IF(AV) IFSM PT Tj Tstg −15 −15 −5 −2.
Published: |