XN1531 Datasheet PDF - Panasonic Semiconductor Silicon NPN epitaxial planer transistor Specs

XN1531 - Silicon NPN epitaxial planer transistor

Datasheet Summary

Features

1 Composite Transistors PT.
Ta 240 80 Ta=25˚C XN1531 IC.
VCE 60 25˚C 50 VCE=4V IC.
VBE Total power dissipation PT (mW) 200 Collector current IC (mA) 60 160 Collector current IC (mA) Ta=75˚C 40.
25˚C IB=500µA 40 400µA 300µA 200µA 20 100µA 120 30 80 20 40 10 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat).
IC 100.

Datasheet Details

Part number	XN1531
Manufacturer	Panasonic Semiconductor
File Size	32.61 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN1531 Datasheet
Additional preview pages of the XN1531 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN1531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SC3130 × 2 elements 0.8 s Basic Part Number of Element +0.

Published: Apr 16, 2005 |