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XN1B301 - Silicon PNP(NPN) epitaxial planer transistor

Datasheet Summary

Features

  • 1 Composite Transistors XN1B301 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC =.
  • 10µA, IE = 0 IC =.
  • 2mA, IB = 0 IE =.
  • 10µA, IC = 0 VCB =.
  • 20V, IE = 0 VCE =.
  • 10V, IB = 0 VCE =.
  • 10V, IC =.
  • 2mA IC =.
  • 100mA, IB =.
  • 10mA VCB =.
  • 10V, IE = 1mA, f = 200MHz VCB =.
  • 10V, IE = 0, f = 1MHz 160.
  • 0.3 80 2.7 min.
  • 60.
  • 50.
  • 7.
  • 0.1.
  • 100 460.

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Datasheet Details

Part number XN1B301
Manufacturer Panasonic Semiconductor
File Size 60.43 KB
Description Silicon PNP(NPN) epitaxial planer transistor
Datasheet download datasheet XN1B301 Datasheet
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Full PDF Text Transcription

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Composite Transistors XN1B301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65±0.15 2.8 -0.3 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 q s Basic Part Number of Element q 1.1 -0.1 +0.
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