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XN1D873 - Silicon N-channel junction FET

Features

  • 1 Composite Transistors PT.
  • Ta 500 2.5 Ta=25˚C XN1D873 ID.
  • VDS 2.5 ID.
  • VGS Total power dissipation PT (mW) 400 2.0 2.0 VGS=0V Drain current ID (mA) Drain current ID (mA) Ta=.
  • 25˚C 1.5 25˚C 300 1.5.
  • 0.1V.
  • 0.2V 1.0.
  • 0.3V.
  • 0.4V 0.5 200 1.0 75˚C 100 0.5 0 0 40 80 120 160 0 0 1 2 3 4 5 6 0.
  • 1.2.
  • 1.0.
  • 0.8.
  • 0.6.
  • 0.4.
  • 0.2 0 Ambient temperature Ta (˚C) Drain to source.

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Datasheet Details

Part number XN1D873
Manufacturer Panasonic
File Size 29.96 KB
Description Silicon N-channel junction FET
Datasheet download datasheet XN1D873 Datasheet
Additional preview pages of the XN1D873 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q q 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 +0.2 s Basic Part Number of Element q 0.8 s Absolute Maximum Ratings Parameter Rating Gate to drain voltage of Drain current element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings –50 30 10 300 150 –55 to +150 Unit V mA mA mW ˚C ˚C 1 : Gate (Tr1) 2 : Gate (Tr2) 3 : Source (Tr2) 0 to 0.1 2SK1103 × 2 elements 0.1 to 0.
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