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XN4130 - Silicon PNP epitaxial planer transistor

Features

  • 5 2 0.95 4 3 s Basic Part Number of Element q 1.1.
  • 0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings.
  • 15.
  • 15.
  • 7.
  • 0.5.
  • 1 300 150.
  • 55 to +150 Unit V V V A A mW ˚C ˚C 1.

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Datasheet Details

Part number XN4130
Manufacturer Panasonic
File Size 34.04 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet XN4130 Datasheet
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Full PDF Text Transcription

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Composite Transistors XN4130 Silicon PNP epitaxial planer transistor Unit: mm For amplification of low frequency output 2.8 –0.3 0.65±0.15 6 0.95 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.5 –0.05 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 s Features 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings –15 –15 –7 – 0.
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