XN4212
Key Features
- 95 4 3 s Basic Part Number of Element q
- 1-0.1
- 4±0.2 s Absolute Maximum Ratings Parameter Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 -55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 8R Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VCB = 10V, IE = -1mA, f = 200MHz -30% 0.8 150 22 1.0 +30% 1.2 4.9 0.2 60 0.25 V V V MHz kΩ min 50 50 0.1 0.5 0.2 typ max Unit V V µA µA mA 0 to 0.05 UN1212 × 2 elements
- 1 to 0.3
- 16-0.06 +0.2 +0.1
- 45±0.1 +0.1 +0.1 1 Composite Transistors PT - Ta 500 XN4212 Total power dissipation PT (mW) 400 300 200 100
