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XN4212 - Silicon NPN epitaxial planer transistor

Features

  • 5 2 0.95 4 3 s Basic Part Number of Element q 1.1.
  • 0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150.
  • 55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIA.

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Datasheet Details

Part number XN4212
Manufacturer Panasonic
File Size 33.74 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN4212 Datasheet
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Full PDF Text Transcription

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Composite Transistors XN4212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 –0.3 0.65±0.15 6 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 s Features 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.
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