XN4312 - Silicon NPN(PNP) epitaxial planer transistor

Features

+0.1 +0.1 1 Composite Transistors XN4312 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VCB = 10V, IE =.
1mA, f = 200MHz.
30% 0.8 150 22 1.0 +30% 1.2 4.9 0.2 60 0.25 V V V MHz kΩ min 50 50 0.1 0.5 0.2 typ max Unit V V µA µA mA s Electrical Character.

Panasonic Semiconductor

Datasheet Details

Part number	XN4312
Manufacturer	Panasonic
File Size	52.18 KB
Description	Silicon NPN(PNP) epitaxial planer transistor
Datasheet	XN4312 Datasheet
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Full PDF Text Transcription

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Composite Transistors XN4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 +0.2 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.9 –0.05 1.9±0.1 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.

Published: Apr 16, 2005 |