XN4322 - Silicon NPN(PNP) epitaxial planer transistor

Features

+0.1 +0.1 1 Composite Transistors XN4322 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω VCB = 10V, IE =.
50mA, f = 200MHz.
30% 0.8 200 4.7 1.0 +30% 1.2 4.9 0.2 50 0.25 V V V MHz kΩ min 50 50 1 1 2 typ max Unit V V µA µA mA s Electrical Characteri.

Panasonic Semiconductor

Datasheet Details

Part number	XN4322
Manufacturer	Panasonic
File Size	52.15 KB
Description	Silicon NPN(PNP) epitaxial planer transistor
Datasheet	XN4322 Datasheet
Additional preview pages of the XN4322 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN4322 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.

Published: Apr 16, 2005 |