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XN4402 - Silicon PNP epitaxial planer transistor

Features

  • 0.5.
  • 0.05 +0.1 +0.1 1 Composite Transistors PT.
  • Ta 500 XN4402 IC.
  • VCE.
  • 800.
  • 700 Ta=25˚C IB=.
  • 10mA.
  • 800.
  • 700 VCE=.
  • 10V Ta=25˚C IC.
  • I B Total power dissipation PT (mW) Collector current IC (mA).
  • 600.
  • 500.
  • 400.
  • 300.
  • 200.
  • 100 Collector current IC (mA) 400 300.
  • 9mA.
  • 8mA.
  • 7mA.
  • 6mA.
  • 5mA.
  • 4mA.
  • 3mA.
  • 2.

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Datasheet Details

Part number XN4402
Manufacturer Panasonic
File Size 34.55 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet XN4402 Datasheet
Additional preview pages of the XN4402 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN4402 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SB710 × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings –60 –50 –5 – 0.
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