XN4504 - Silicon NPN epitaxial planer transistor

Features

+0.1 +0.1 Unit V V V µA 0.1 200 60 0.13 0.4 1.2 200 10 1.0 800 V V MHz pF Ω Pulse measurement Ron test circuit VB VV VA Ron= VB !1000(Ω) VA.
VB 1 Composite Transistors PT.
Ta 500 1.2 IB=4.0mA XN4504 IC.
VCE 100 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=25 Total power dissipation PT (mW) Collector current IC (A) 400 1.0 3.5mA 0.8 3.0mA 2.5mA 0.6 2.0mA 1.5mA 0.4 1.0mA 0.2 0.5mA 30 10 3 1 0.3 0.1 0.03 0.01 0.

Panasonic Semiconductor

Datasheet Details

Part number	XN4504
Manufacturer	Panasonic
File Size	34.98 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN4504 Datasheet
Additional preview pages of the XN4504 datasheet.

📁 Similar Datasheet

XN4410 - 2A PWM Buck Converter (Innuovo)

Other Datasheets by Panasonic Semiconductor

XN4501 - Silicon NPN epitaxial planer transistor
XN4502 - Silicon NPN epitaxial planer transistor
XN4503 - Silicon NPN epitaxial planer transistor
XN4505 - NPN epitaxial planer transistor
XN4506 - NPN epitaxial planer transistor
XN4509 - Silicon NPN epitaxial planer transistor
XN4556 - NPN epitaxial planer transistor
XN4111 - Silicon PNP epitaxial planer transistor

Full PDF Text Transcription

Click to expand full text

Composite Transistors XN4504 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD1328 × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 25 20 12 0.

Published: Apr 16, 2005 |