XN4601 - Silicon NPN(PNP) epitaxial planer transistor

Features

+0.1 +0.1 1 Composite Transistors XN4601 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE =.
2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 160 0.1 150 3.5 min 60 50 7 0.1 100 460 0.3 V MHz pF typ max Unit V V V µA µA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage.

Panasonic Semiconductor

Datasheet Details

Part number	XN4601
Manufacturer	Panasonic
File Size	60.74 KB
Description	Silicon NPN(PNP) epitaxial planer transistor
Datasheet	XN4601 Datasheet
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Full PDF Text Transcription

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Composite Transistors XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 +0.2 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.9 –0.05 1.9±0.1 5 2 0.95 4 3 0.4±0.

Published: Apr 16, 2005 |