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XN5553 Datasheet Silicon NPN epitaxial planer transistor

Manufacturer: Panasonic

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Overview

Composite Transistors XN5553 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD1149 × 2 elements 1.1–0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 100 100 15 20 50 300 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 4U Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transition frequency (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) NV fT Conditions IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 60V, IE = 0 VCE = 60V, IB = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100KΩ, Function = FLAT VCB = 10V, IE = –2mA, f = 200MHz 400 0.05 80 150 min 100 100 15 0.1 1.0 2000 0.2 V mV MHz typ max Unit V V V µA µA 0 to 0.05 0.1 to 0.3 0.8 0.16–0.06 +0.2 s Basic Part Number of Element +0.1 1.45±0.

Key Features

  • +0.1 +0.1 1 Composite Transistors PT.
  • Ta 500 80 Ta=25˚C XN5553 IC.
  • VCE 60 VCE=10V 50 25˚C IC.
  • VBE Total power dissipation PT (mW) Collector current IC (mA) 60 300 IB=100µA 80µA 60µA 50µA 40µA 30µA 20µA Collector current IC (mA) 400 40 Ta=75˚C.
  • 25˚C 40 30 200 20 20 10µA 100 10 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) V.

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