XN5553 - Silicon NPN epitaxial planer transistor

Features

+0.1 +0.1 1 Composite Transistors PT.
Ta 500 80 Ta=25˚C XN5553 IC.
VCE 60 VCE=10V 50 25˚C IC.
VBE Total power dissipation PT (mW) Collector current IC (mA) 60 300 IB=100µA 80µA 60µA 50µA 40µA 30µA 20µA Collector current IC (mA) 400 40 Ta=75˚C.
25˚C 40 30 200 20 20 10µA 100 10 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) V.

Panasonic Semiconductor

Datasheet Details

Part number	XN5553
Manufacturer	Panasonic Semiconductor
File Size	34.96 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN5553 Datasheet
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Composite Transistors XN5553 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 0.65±0.15 2.8 –0.3 +0.2 +0.25 1.5 –0.05 6 0.65±0.15 1 0.3 –0.05 0.5 –0.05 0.95 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SD1149 × 2 elements 1.1–0.1 0.4±0.

Published: Apr 16, 2005 |