XN6501 - Silicon NPN epitaxial planer transistor

Features

5 2 0.95 4 3 1.1.
0.1 q 2SD601A × 2 elements 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 60 50 7 100 200 300 150.
55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr.

Panasonic Semiconductor

Datasheet Details

Part number	XN6501
Manufacturer	Panasonic Semiconductor
File Size	33.49 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN6501 Datasheet
Additional preview pages of the XN6501 datasheet.

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Full PDF Text Transcription

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Composite Transistors XN6501 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 2.8 –0.3 0.65±0.15 6 0.95 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.5 –0.05 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 s Features 5 2 0.95 4 3 1.1–0.1 q 2SD601A × 2 elements 0.4±0.

Published: Apr 16, 2005 |