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XN6A554 - Silicon NPN epitaxial planer transistor

Features

  • 5 2 0.95 4 3 s Basic Part Number of Element q 1.1.
  • 0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 40 40 5 100 300 300 150.
  • 55 to +150 Unit V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Coll.

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Datasheet Details

Part number XN6A554
Manufacturer Panasonic Semiconductor
File Size 38.70 KB
Description Silicon NPN epitaxial planer transistor
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Composite Transistors XN6A554 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching 2.8 –0.3 0.65±0.15 6 0.95 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 0.5 –0.05 2.9 –0.05 q q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. Low VCE(sat). 1.9±0.1 +0.2 s Features 5 2 0.95 4 3 s Basic Part Number of Element q 1.1–0.1 0.4±0.
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