XP0121N Datasheet | Panasonic

Features q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 1 2 3 0.9± 0.1 q UN221N × 2 elements 0.7±0.1 s Basic Part Number of Element 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 150 150 - 55 to +150 Unit V V m A m W ˚C ˚C 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) Marking Symbol: HN Internal Connection 1 2 3 4 Tr1 5 0 to 0.1 0.2±0.1 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC- 88A S- Mini Type Package (5- pin) Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer h FE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency - 1 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO h FE h FE (small/large)- 1 VCE(sat) VOH VOL R1 R1/R2 f T VCB = 10V, IE = - 2m A, f = 200MHz Conditions IC = 10µA, IE = 0 IC = 2m A, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5m A VCE = 10V, IC = 5m A IC = 10m A, IB = 0.3m A VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ - 30% 4.7 0.1 150 MHz 4.9 0.2 +30% 80 0.5 0.99 0.25 V V V kΩ min 50 50 0.1 0.5 0.2 400 typ max Unit V V µA µA m A Ratio between 2 elements 1 posite Transistors - Ta Total power dissipation PT (m W) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta...