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XP03312 - Composite Transistor

Key Features

  • 0.65 1 2 3 5 4 0.2 4 : Collector(Tr2) 5 : Collector(Tr1) Base(Tr2) EIAJ : SC.
  • 88A S.
  • Mini Type Package (5.
  • pin) Tr2 0.2±0.05 0.2±0.1 1 Composite Transistors XP03312 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE =.
  • 1mA, f = 200MHz Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB =.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Composite Transistors XP03312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 0.425 2.1±0.1 1.25±0.1 0.425 0.65 q q 0.9± 0.1 q UN1212+UN1112 1 : Emitter(Tr1) 2 : Base(Tr1) 3 : Emitter(Tr2) s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 –50 –50 –100 150 150 –55 to +150 Unit V V mA V V mA mW ˚C ˚C Marking Symbol: 4P Internal Connection 1 2 3 4 Tr1 5 0 to 0.1 s Basic Part Number of Element 0.7±0.1 0.12 – 0.