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XP03383 - Composite Transistor

Key Features

  • 1 2 3 5 4 UN1213+UN111F 1 : Emitter(Tr1) 2 : Base(Tr1) 3 : Emitter(Tr2) s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100.
  • 50.
  • 50.
  • 100 150 150.
  • 55 to +150 Unit V V mA V V mA mW.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Composite Transistors XP03383 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For switching/digital circuits 0.65 0.65 q 0.9± 0.1 s Basic Part Number of Element q 0.7±0.1 0.2 q Two elements incorporated into one package. (Transistors with built-in resistor, Tr1 collecter is connected to Tr2 base.) Reduction of the mounting area and assembly cost by one half. 2.0±0.