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XP04115 - Silicon PNP Transistor

Key Features

  • 6 5 4 1 DataSheet 4 U . com www. DataSheet4U. com Composite Transistors PT.
  • Ta 250 XP04115 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) IC.
  • VCE.
  • 160.
  • 100 VCE(sat).
  • IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 400 hFE.
  • IC VCE=.
  • 10V Collector current IC (mA).
  • 120.
  • 100.
  • 80.
  • 60.
  • 0.9mA.
  • 0.

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Datasheet Details

Part number XP04115
Manufacturer Panasonic
File Size 175.33 KB
Description Silicon PNP Transistor
Datasheet download datasheet XP04115 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Composite Transistors XP04115 (XP4115) Silicon PNP epitaxial planer transistor Unit: mm (0.425) For switching/digital circuits 0.2±0.05 0.12+0.05 –0.02 1 2 3 q (0.65) (0.65) 1.3±0.1 2.0±0.1 10° s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 SMini6-G1 Package Marking Symbol: 6T Internal Connection 1 2 3 Tr1 6 5 4 0 to 0.