XP04387 Datasheet PDF - Panasonic Semiconductor Silicon NPN(PNP) epitaxial planer transistor Specs

XP04387 - Silicon NPN(PNP) epitaxial planer transistor

Datasheet Summary

Features

1 2 3 6 5 4 0.2 0.9±0.1 s Basic Part Number of Element q 0.7±0.1 UN1213+UN1119 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100.
50.
50.
100 150 150.
55.

Datasheet Details

Part number	XP04387
Manufacturer	Panasonic Semiconductor
File Size	51.53 KB
Description	Silicon NPN(PNP) epitaxial planer transistor
Datasheet	XP04387 Datasheet
Additional preview pages of the XP04387 datasheet.

📁 Similar Datasheet

XP02N90I - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP03N70H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP03N70J - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP06531 - Silicon NPN epitaxial planer transistor (Panasonic)

XP0704GMT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP08P20GP - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP0904GMT - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP09N20H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

XP09T10GK - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)

Full PDF Text Transcription

Click to expand full text

Composite Transistors XP04387 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For switching/digital circuits 0.65 2.1±0.1 0.65 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 1 2 3 6 5 4 0.2 0.9±0.1 s Basic Part Number of Element q 0.7±0.1 UN1213+UN1119 0 to 0.1 0.2±0.

Published: Apr 16, 2005 |