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XP1112 - Silicon PNP epitaxial planer transistor

Key Features

  • G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) G Reduction of the mounting area and assembly cost by one half. I Basic Part Number of Element G UNR1112(UN1112) × 2 elements 0.20±0.05 5 4 (0.425) Unit: mm 0.12+.
  • 00..0025 0.2±0.1 1.25±0.10 2.1±0.1 5° 1 23 (0.65) (0.65) 1.3±0.1 2.0±0.1 10° 0.9±0.1 0.9.
  • +00..12 0 to 0.1 I Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Rating Collector to base voltage of Coll.

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Datasheet Details

Part number XP1112
Manufacturer Panasonic
File Size 391.75 KB
Description Silicon PNP epitaxial planer transistor
Datasheet download datasheet XP1112 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Composite Transistors XP01112 (XP1112) Silicon PNP epitaxial planer transistor For switching/digital circuits I Features G Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) G Reduction of the mounting area and assembly cost by one half. I Basic Part Number of Element G UNR1112(UN1112) × 2 elements 0.20±0.05 5 4 (0.425) Unit: mm 0.12+–00..0025 0.2±0.1 1.25±0.10 2.1±0.1 5° 1 23 (0.65) (0.65) 1.3±0.1 2.0±0.1 10° 0.9±0.1 0.9–+00..12 0 to 0.