XP4210
Key Features
- 65 1 2 3 6 5 4
- 9±0.1 s Basic Part Number of Element q 0 to 0.1 UN1210 × 2 elements
- 7±0.1
- 2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 150 150 -55 to +150 Unit V V mA mW ˚C ˚C 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAS : SC-88 S-Mini Type Package (6-pin) Marking Symbol: 8Z Internal Connection 1 2 3 Tr1 6 5 4 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VCB = 10V, IE = -2mA, f = 200MHz -30% 150 47 +30% 4.9 0.2 160 min 50 50 0.1 0.5 0.01 460 0.25 V V V MHz kΩ typ max Unit V V µA µA mA
- 12 -0.02 +0.05 1 Composite Transistors PT - Ta 250 XP4210 Total power dissipation PT (mW) 200 150 100 50
