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XP5501 - Silicon NPN epitaxial planer transistor

Features

  • 0.65 1 2 3 6 5 4 0.9±0.1 q 2SD601A × 2 elements 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 60 50 7 100 200 150 150.
  • 55 to +150 Unit V V V mA mA mW 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr.

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Datasheet Details

Part number XP5501
Manufacturer Panasonic
File Size 33.19 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XP5501 Datasheet
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Full PDF Text Transcription

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Composite Transistors XP5501 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For general amplification 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.9±0.1 q 2SD601A × 2 elements 0.7±0.1 0 to 0.1 0.2±0.
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