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XP5555 - Silicon NPN epitaxial planer transistor

Features

  • 0.65 1 2 3 6 5 4 0.9±0.1 q 2SC4782 × 2 elements 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 25 20 5 200 300 150 150.
  • 55 to +150 Unit V V V mA mA mW 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr.

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Datasheet Details

Part number XP5555
Manufacturer Panasonic Semiconductor
File Size 37.01 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XP5555 Datasheet
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Full PDF Text Transcription

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Composite Transistors XP5555 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For high speed switching 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.9±0.1 q 2SC4782 × 2 elements 0.7±0.1 0 to 0.1 0.2±0.
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