• Part: XP5601
  • Description: Silicon PNP(NPN) epitaxial planer transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 60.32 KB
XP5601 Datasheet (PDF) Download
Panasonic
XP5601

Key Features

  • 9±0.1 q 2SB709A+2SD601A
  • 7±0.1 0 to 0.1
  • 2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings -60 -50 -7 -100 -200 60 50 7 100 200 150 150 -55 to +150 Unit V V V mA mA V 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: 4N Internal Connection 1 Tr1 6 5 4 V V mA mA mW ˚C ˚C 2 3 Tr2
  • 12 -0.02 s Basic Part Number of Element
  • 2 +0.05 1 Composite Transistors XP5601 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = -10µA, IE = 0 IC = -2mA, IB = 0 IE = -10µA, IC = 0 VCB = -20V, IE = 0 VCE = -10V, IB = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 160 - 0.3 80 2.7 min -60 -50 -7 - 0.1 -100 460 - 0.5 V MHz pF typ max Unit V V V µA µA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance q Tr2 Parameter Symbol VCBO VCEO VEBO ICBO I