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XP5601 - Silicon PNP(NPN) epitaxial planer transistor

Features

  • 1 2 3 6 5 4 0.9±0.1 q 2SB709A+2SD601A 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚.

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Datasheet Details

Part number XP5601
Manufacturer Panasonic
File Size 60.32 KB
Description Silicon PNP(NPN) epitaxial planer transistor
Datasheet download datasheet XP5601 Datasheet
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Full PDF Text Transcription

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Composite Transistors XP5601 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For general amplification 0.65 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 1 2 3 6 5 4 0.9±0.1 q 2SB709A+2SD601A 0.7±0.1 0 to 0.1 0.2±0.
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