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XP6501 - Silicon NPN epitaxial planer transistor

Key Features

  • 0.65 1 2 3 6 5 4 0.9±0.1 q 2SD601A × 2 elements 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 60 50 7 100 200 150 150.
  • 55 to +150 Unit V V V mA mA mW 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base.

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Datasheet Details

Part number XP6501
Manufacturer Panasonic
File Size 33.25 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XP6501 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Composite Transistors XP6501 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For general amplification 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.9±0.1 q 2SD601A × 2 elements 0.7±0.1 0 to 0.1 0.2±0.