XP6501
Key Features
- 65 1 2 3 6 5 4
- 9±0.1 q 2SD601A × 2 elements
- 7±0.1 0 to 0.1
- 2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 60 50 7 100 200 150 150 -55 to +150 Unit V V V mA mA mW 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: 5N Internal Connection 1 Tr1 6 5 4 ˚C ˚C 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
- 1 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE (small/large)*1 VCE(sat) fT Cob Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 160 0.5 0.99 0.1 150 3.5 0.3 V MHz pF min 60 50 7 0.1 100 460 typ max Unit V V V µA µA Ratio between 2 elements
- 12 -0.02 s Basic Part Number of Element
- 2 +0.05 1 Composite Transistors PT - Ta 250 60 Ta=25˚C IB=160µA XP6501 IC - VCE 1200 VCE=10V Ta=25˚C 1000 IB - VBE Total power dissipation PT (mW) Collector current IC (mA) 200 50 40 120µA 100µA Base current IB (µA) 140µA 800 15
