XP8081
Key Features
- 9±0.1 q 2SK1103+UN1213 (transistors with built-in resistor)
- 7±0.1 0 to 0.1
- 2±0.1 s Absolute Maximum Ratings Parameter Gate to drain voltage Tr1 Drain current Gate current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VGDS ID IG VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings -50 20 10 50 50 100 150 150 -55 to +150 Unit V mA mA V V mA mW ˚C ˚C 1 : Drain (Tr1) 4 : Emitter (Tr2) 2 : Source (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Gate (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: 9Z Internal Connection 1 2 3 Tr1 6 5 4 Tr2
- 12 -0.02 s Basic Part Number of Element
- 2 +0.05 1 Composite Transistors XP8081 (Ta=25˚C) Symbol VGDS IDSS IGSS VGSC gm RDS(on) Ciss Crss Coss Conditions IG = -10µA, VDS = 0 VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, f = 1MHz 1.8 2.5 400 7 1.5 1.5 min -50 0.2 2.2 -10 -1.0 typ max Unit V mA nA V mS Ω pF pF pF s Electrical Characteristics q Tr1 Parameter Gate to drain voltage Drain current Gate cutoff current Gate to source cutoff voltage Mutual conductance Drain resistance Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB
