Panasonic 2PG402
Insulated Gate Bipolar Transistor
| Part No. | 2PG402 |
|---|---|
| Datasheet | 2PG402 Download |
| Manufacturer |  Panasonic |
| Description | Insulated Gate Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package unit: mm 6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1 q For flash-light for use in a camera 2.3± 0.1 0.2max. 5.5± 0.1 7.3± 0.1 9.8± 0.1 1.0± 0.2 sAPPLICATIONS
sABSOLUTE MAXIMUM RATINGS
(TC = 25°C) Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 ±8 5 130 10 1 150 −55 to +150 Unit V V A A W °C °C 2.5± 0.1 2.5± 0.1 0.85± 0.1 4.6± 0.1 0.75± 0.1 0.5± 0.1 0.05 to 0.15 1.0± 0.1 2.3± 0.1 1 2 3 Marking 1: Emitter 2: Collector 3: Gate U Type Package sELECTRICAL CHARACTERISTICS
(TC = 25°C) Parameter Collector to emitter cut-off current Gate to emitter leakage current Collector to emitter breakdown voltage Gate threshold voltage Collector to emitter saturation voltage Input capacitance (Co...