Panasonic 2SA1018
Silicon PNP Transistor
| Part No. | 2SA1018 |
|---|---|
| Datasheet | 2SA1018 Download |
| Manufacturer |  Panasonic |
| Description | Silicon PNP Transistor |
| Buy | Stock & Price |
FEATURES
q High collector to emitter voltage VCEO. sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –250 –200 –5 –100 –70 750 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICEO VCEO VEBO hFE fT Cob * Conditions VCE = –120V, IB = 0, Ta = 60˚C IC = –100µA, IB = 0 IE = –1µA, IC = 0 VCE = –10V, IC = –5mA IC = –50mA, IB = –5mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f= 1MHz min...